Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

Impact of PVT variability on 20 nm FinFET standard cells

Effect of underlap on 30 nm Gate Length FinFET based LNA using TCAD Simulations

The effect of gate – drain/source underlap ( Lun ) on a narrow band LNA performance has been studied , in 30 nm FinFET using device and mixed mode simulations. Studies are done by maintaining and not maintaining the leakage current (Ioff) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used...

Effect of Underlap on 30 nm Gate Length FinFET Based LNA Using TCAD Simulations

The effect of gate – drain/source underlap ( Lun ) on a narrow band LNA performance has been studied , in 30 nm FinFET using device and mixed mode simulations. Studies are done by maintaining and not maintaining the leakage current (Ioff) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used...

Optimization of Gate – Source/Drain Underlap on 30 nm Gate Length FinFET Based LNA Using TCAD Simulations

The effect of gate – drain/source underlap (Lun) on a narrow band LNA performance has been studied, in 30 nm FinFET using device and mixed mode simulations. Studies are sssssdone by maintaining and not maintaining the leakage current (Ioff) and threshold voltage (Vth) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain a...

On Channel Shape Variation of 10-nm-Gate Gate-All-Around Silicon Nanowire MOSFETs

Recently, gate-all-around (GAA) nanowire field effect transistors (NWFETs) have attracted increasing attention due to their superior gate control and short channel effect immunity [1-4]. However, confined by the limitation of manufacturing process, the different aspect ratio (AR) results in different shapes of channel cross section, such as ellipse-shaped or rectangular-shaped instead of the id...